2SD772A Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SD772A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 14
   Noise Figure, dB: -
   Package: TO220

2SD772A Transistor Equivalent Substitute - Cross-Reference Search

2SD772A Datasheet (PDF)

..1. Size:81K inchange semiconductor
2sd772 2sd772a 2sd772b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

8.1. Size:208K inchange semiconductor
2sd772.pdf

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

9.1. Size:231K toshiba
2sd777.pdf

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9.2. Size:161K nec
2sd774.pdf