2SD784
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD784
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 1700
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO3
2SD784
Transistor Equivalent Substitute - Cross-Reference Search
2SD784
Datasheet (PDF)
9.1. Size:125K 1
2sd780 2sd780a.pdf 
RoHS 2SD780/2SD780ASOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25) 2. 80 0. 051. 60 0. 05 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 60 V 2SD780 V(BR)CBO: 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg: -55 to +150 E
9.4. Size:31K hitachi
2sd787 2sd788.pdf
2SD787, 2SD788Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB738 and 2SB739OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD787, 2SD788Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD787 2SD788 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base voltage VEBO
9.6. Size:30K hitachi
2sd789.pdf
2SD789Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB740OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD789Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector current IC 1ACollector
9.7. Size:137K tysemi
2sd780a.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specification2SD780ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesMicro package.High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating
9.8. Size:1092K kexin
2sd780.pdf
SMD Type TransistorsNPN Transistors2SD780SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB7361 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO
9.9. Size:1132K kexin
2sd780a.pdf
SMD Type TransistorsNPN Transistors2SD780ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB736A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE
9.10. Size:179K inchange semiconductor
2sd783.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD783DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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