2SD793 Datasheet. Specs and Replacement

Type Designator: 2SD793  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 2SD793 Substitution

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2SD793 datasheet

 ..1. Size:187K  inchange semiconductor

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2SD793

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD793 DESCRIPTION Collector-Emitter BreakdownVoltage- V = 30V(Min.) (BR)CEO Low Collector to Emitter Saturation Voltage V = 2.0V(Max.)@I = 1.5A CE(sat) C Excellent h linearity FE Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed... See More ⇒

 9.1. Size:125K  toshiba

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2SD793

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2SD793

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Detailed specifications: 2SD786, 2SD787, 2SD788, 2SD789, 2SD78A, 2SD79, 2SD790, 2SD792, S9013, 2SD794, 2SD794A, 2SD794AO, 2SD794AR, 2SD794AY, 2SD794O, 2SD794R, 2SD794Y

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