All Transistors. 2SD798 Datasheet

 

2SD798 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD798
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO220

 2SD798 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD798 Datasheet (PDF)

 ..1. Size:131K  mospec
2sd798.pdf

2SD798 2SD798

AAA

 ..2. Size:76K  jmnic
2sd798.pdf

2SD798 2SD798

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION1 Base 2 Collector;connected tomounting base 3 emitterFig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNITVCB

 ..3. Size:212K  inchange semiconductor
2sd798.pdf

2SD798 2SD798

isc Silicon NPN Darlington Power Transistor 2SD798DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

 9.1. Size:125K  toshiba
2sd797.pdf

2SD798 2SD798

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:258K  toshiba
2sd799.pdf

2SD798 2SD798

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:157K  nec
2sd794.pdf

2SD798 2SD798

 9.4. Size:42K  no
2sd795.pdf

2SD798

 9.5. Size:81K  jmnic
2sd799.pdf

2SD798 2SD798

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum rating

 9.6. Size:324K  lge
2sd794-2sd794a.pdf

2SD798 2SD798

2SD794/2SD794A TO-126C Transistor (NPN)TO-126C1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V 3.0007.8003.4008.200 1.800Collector-Emitter Voltage 2SD794 45 2.200VCEO V 4.040

 9.7. Size:182K  cn sptech
2sd797.pdf

2SD798 2SD798

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.8. Size:204K  inchange semiconductor
2sd797.pdf

2SD798 2SD798

isc Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator ap

 9.9. Size:210K  inchange semiconductor
2sd799.pdf

2SD798 2SD798

isc Silicon NPN Darlington Power Transistor 2SD799DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min.)(BR)CEOHigh DC Current Gain: h = 600(Min.) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.10. Size:214K  inchange semiconductor
2sd795.pdf

2SD798 2SD798

isc Silicon NPN Power Transistor 2SD795DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.7V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low speedswitching applications.ABSOLUT

 9.11. Size:214K  inchange semiconductor
2sd794.pdf

2SD798 2SD798

isc Silicon NPN Power Transistor 2SD794DESCRIPTIONHigh Collector Current -I = 3ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOComplement to Type 2SB744Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.12. Size:202K  inchange semiconductor
2sd792.pdf

2SD798 2SD798

isc Silicon NPN Power Transistor 2SD792DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

 9.13. Size:187K  inchange semiconductor
2sd793.pdf

2SD798 2SD798

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD793DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = 30V(Min.)(BR)CEOLow Collector to Emitter Saturation Voltage: V = 2.0V(Max.)@I = 1.5ACE(sat) CExcellent h linearityFEComplement to Type 2SB743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 9.14. Size:148K  inchange semiconductor
2sd794-a 2sd794 2sd794a.pdf

2SD798 2SD798

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top