2SD808 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD808
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 500 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
2SD808 Transistor Equivalent Substitute - Cross-Reference Search
2SD808 Datasheet (PDF)
2sd807.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD807DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM
2sd803.pdf
isc Silicon NPN Darlingtion Power Transistor 2SD803DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 2000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier
2sd800.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD800DESCRIPTIONHigh Breakdown Voltage-: V = 750V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
