2SD811 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD811
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3
2SD811 Transistor Equivalent Substitute - Cross-Reference Search
2SD811 Datasheet (PDF)
2sd811.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD811DESCRIPTIONHigh Breakdown Voltage-: V = 900V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX
2sd819.pdf
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2sd814 e.pdf
Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th
2sd814.pdf
Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th
2sd814a.pdf
SMD Type TransistorsNPN Transistors2SD814ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta
2sd814.pdf
SMD Type TransistorsNPN Transistors2SD814SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
2sd818.pdf
isc Silicon NPN Power Transistor 2SD818DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd819.pdf
isc Silicon NPN Power Transistor 2SD819DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd812.pdf
isc Silicon NPN Power Transistor 2SD812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier a
2sd817.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD817DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWide area of safe operationWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output a
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
