All Transistors. 2SD813 Datasheet

 

2SD813 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD813
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO236

 2SD813 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD813 Datasheet (PDF)

 9.1. Size:93K  toshiba
2sd819.pdf

2SD813
2SD813

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:41K  panasonic
2sd814 e.pdf

2SD813
2SD813

Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th

 9.3. Size:37K  panasonic
2sd814.pdf

2SD813
2SD813

Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th

 9.4. Size:914K  kexin
2sd814a.pdf

2SD813
2SD813

SMD Type TransistorsNPN Transistors2SD814ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta

 9.5. Size:890K  kexin
2sd814.pdf

2SD813
2SD813

SMD Type TransistorsNPN Transistors2SD814SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

 9.6. Size:203K  inchange semiconductor
2sd818.pdf

2SD813
2SD813

isc Silicon NPN Power Transistor 2SD818DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 9.7. Size:203K  inchange semiconductor
2sd819.pdf

2SD813
2SD813

isc Silicon NPN Power Transistor 2SD819DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 9.8. Size:180K  inchange semiconductor
2sd811.pdf

2SD813
2SD813

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD811DESCRIPTIONHigh Breakdown Voltage-: V = 900V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX

 9.9. Size:213K  inchange semiconductor
2sd812.pdf

2SD813
2SD813

isc Silicon NPN Power Transistor 2SD812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier a

 9.10. Size:179K  inchange semiconductor
2sd817.pdf

2SD813
2SD813

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD817DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWide area of safe operationWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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