2SD831 Datasheet. Specs and Replacement
Type Designator: 2SD831 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SD831 datasheet
9.1. Size:96K fuji
2sd833.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
9.2. Size:101K fuji
2sd835.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
9.5. Size:213K inchange semiconductor
2sd833.pdf
isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION High DC Current Gain- h = 4000(Min) @I = 3A FE C Low Collector Saturation Voltage- V = 1.5V(Max.) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor controls General purpose power ampli... See More ⇒
9.6. Size:213K inchange semiconductor
2sd835.pdf
isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION High DC Current Gain- h = 400(Min) @I = 4A FE C Low Collector Saturation Voltage- V = 1.5V(Max.) @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignitor Relay& solenoid drivers Motor controls Switching regulators ABSOLUTE M... See More ⇒
9.7. Size:195K inchange semiconductor
2sd836.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 2A FE C High Switching Speed Complement to Type 2SB750 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
9.8. Size:211K inchange semiconductor
2sd837.pdf
isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 3A FE C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒
Detailed specifications: 2SD826E, 2SD826F, 2SD826G, 2SD827, 2SD828, 2SD829, 2SD83, 2SD830, 13007, 2SD832, 2SD833, 2SD834, 2SD835, 2SD836, 2SD836A, 2SD836B, 2SD837
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