2SD843Y Datasheet. Specs and Replacement
Type Designator: 2SD843Y ππ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
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2SD843Y datasheet
8.1. Size:130K toshiba
2sd843.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.2. Size:214K inchange semiconductor
2sd843.pdf
isc Silicon NPN Power Transistor 2SD843 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 4A CE(sat) C High Collector Power Dissipation Complement to Type 2SB753 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications Power amplifier application... See More ⇒
9.2. Size:103K toshiba
2sd842.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
9.3. Size:141K fuji
2sd847.pdf
FUJI POWER TRANSISTOR 2SD847 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity hFE High collector current Excellent safe operating area High reliability Applications Audio amp JEDEC - Series regulators EIAJ SC-65 General purpose power amplifiers (Complementary to 2SB757) Maximum ratings and characterist... See More ⇒
9.4. Size:196K cn sptech
2sd844o 2sd844y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 APPLICATIONS High current switching applications Power amplifier a... See More ⇒
9.5. Size:217K inchange semiconductor
2sd845.pdf
isc Silicon NPN Power Transistor 2SD845 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB755 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒
9.6. Size:213K inchange semiconductor
2sd847.pdf
isc Silicon NPN Power Transistor 2SD847 DESCRIPTION Good Linearity of h FE High Collector Current Wide Area of Safe Operation High Reliability Complement to Type 2SB757 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications Series regulators applications General purpose power amplifiers ABSOLUT... See More ⇒
9.7. Size:219K inchange semiconductor
2sd844.pdf
isc Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hi... See More ⇒
9.8. Size:208K inchange semiconductor
2sd841.pdf
isc Silicon NPN Power Transistor 2SD841 DESCRIPTION High Collector-Base Breakdown Voltage V = 800V(Min.) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
9.9. Size:203K inchange semiconductor
2sd849.pdf
isc Silicon NPN Power Transistor 2SD849 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SD838, 2SD839, 2SD84, 2SD840, 2SD841, 2SD842, 2SD843, 2SD843O, 2SC4793, 2SD844, 2SD844O, 2SD844Y, 2SD845, 2SD846, 2SD847, 2SD848, 2SD848A
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