2SD844Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD844Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO218
2SD844Y Transistor Equivalent Substitute - Cross-Reference Search
2SD844Y Datasheet (PDF)
2sd844o 2sd844y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754APPLICATIONSHigh current switching applicationsPower amplifier a
2sd844.pdf
isc Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHi
2sd842.pdf
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2sd843.pdf
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2sd847.pdf
FUJI POWER TRANSISTOR2SD847TRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTONHIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesExcellent linearity hFEHigh collector currentExcellent safe operating areaHigh reliabilityApplicationsAudio ampJEDEC -Series regulators EIAJ SC-65General purpose power amplifiers(Complementary to 2SB757)Maximum ratings and characterist
2sd845.pdf
isc Silicon NPN Power Transistor 2SD845DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB755Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
2sd847.pdf
isc Silicon NPN Power Transistor 2SD847DESCRIPTIONGood Linearity of hFEHigh Collector CurrentWide Area of Safe OperationHigh ReliabilityComplement to Type 2SB757Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulators applicationsGeneral purpose power amplifiersABSOLUT
2sd841.pdf
isc Silicon NPN Power Transistor 2SD841DESCRIPTIONHigh Collector-Base Breakdown Voltage: V = 800V(Min.)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
2sd843.pdf
isc Silicon NPN Power Transistor 2SD843DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier application
2sd849.pdf
isc Silicon NPN Power Transistor 2SD849DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
