2SD852 Datasheet and Replacement

   Type Designator: 2SD852
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: MT-200

2SD852 Substitution

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2SD852 Datasheet (PDF)

9.1. Size:88K panasonic
2sd855.pdf pdf_icon

9.2. Size:109K panasonic
2sd857.pdf pdf_icon

9.3. Size:111K panasonic
2sd856.pdf pdf_icon

9.4. Size:34K no
2sd851.pdf pdf_icon

9.5. Size:47K no
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9.6. Size:189K wingshing
2sd850.pdf pdf_icon

Silicon Diffused Power Transistor2SD850GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCollector-emitter voltage (open base)

9.7. Size:150K inchange semiconductor
2sd850.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.8. Size:212K inchange semiconductor
2sd855.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.9. Size:208K inchange semiconductor
2sd857.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD857DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

9.10. Size:213K inchange semiconductor
2sd856.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

9.11. Size:212K inchange semiconductor
2sd859.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

9.12. Size:217K inchange semiconductor
2sd858.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD858DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Datasheet: 2SD845 , 2SD846 , 2SD847 , 2SD848 , 2SD848A , 2SD849 , 2SD850 , 2SD851 , 2SD2499 , 2SD854 , 2SD855 , 2SD855A , 2SD855B , 2SD856 , 2SD856A , 2SD856B , 2SD857 .