2SD880G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD880G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO220
2SD880G Transistor Equivalent Substitute - Cross-Reference Search
2SD880G Datasheet (PDF)
2sd880.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number
2sd880.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 60 V
2sd880.pdf
2SD880(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 7 V IC Collect
2sd880.pdf
2SD880NPN Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 1BASE2 FEATURES:31* Low frequency power amplifier 1. BASE2. COLLECTOR* Complement to 2SB834 3. EMITTER3TO-220EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas
2sd880.pdf
NPN NPN Epitaxial Silicon Transistor R2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME
2sd880.pdf
2SD880 Rev.H Oct.-2018 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , 2SB834 High DC current gain, low saturation voltage, high power dissipation, complementary to 2SB834. / Applications
2sd880.pdf
2SD880NPN-TRANSISTORNPN, 3A, 60V NPN /CLASSIFICATION OF hFE Rank O Y GR 2SB834Range 60-120 100-200 150-300 TO-220C
2sd880.pdf
isc Silicon NPN Power Transistor 2SD880DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB834Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicatio
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
