2SD898A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD898A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 9.5
Noise Figure, dB: -
Package: TO3
2SD898A Transistor Equivalent Substitute - Cross-Reference Search
2SD898A Datasheet (PDF)
2sd898.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD898DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection
2sd896.pdf
Ordering number:678F 2SB776 : PNP Epitaxial Planar Silicon Transistor2SD896 : NPN Triple Diffused Planar Silicon Transistor2SB776/2SD896100V/7A, AF 40W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package2022A (Interchangeable with TO-3).[2SB776/2SD896] Wide ASO because of on-c
2sd894.pdf
Ordering number:EN590BNPN Epitaxial Planar Silicon Transistor2SD89425V/1.5A Driver ApplicationsUse Package Dimensions Motor drive, printer hummer drive, relay drive,unit:mmvoltage regulator controller.2009A[2SD894]8.0Features 2.74.0 High DC Current Gain (not less than 4000). Wide ASO.3.0 Low saturation voltage (1.5V max). Large power rating (PC=1
2sd895.pdf
Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor2SD895 : NPN Triple Diffused Planar Silicon Transistor2SB775/2SD89585V/6A, AF 35W Output ApplicationsFeatures Package Dimensions Wide ASO because of on-chip ballast resistance.unit:mm Capable of being mounted easily becasuse of one-2022Apoint fixing type plastic molded package[2SB775/2SD895](Inter
2sd893 e.pdf
Transistor2SD893, 2SD893ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.
2sd892 e.pdf
Transistor2SD892, 2SD892ASilicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)Parameter Sym
2sd896.pdf
isc Silicon NPN Power Transistor 2SD896DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB776Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40W audio frequency output applications.ABSOL
2sd897.pdf
isc Silicon NPN Power Transistor 2SD897DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 1ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection circuits.ABSOLUTE MAXIMU
2sd895.pdf
isc Silicon NPN Power Transistor 2SD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB775Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 35W audio frequency output applications.ABSOLU
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
