2SD901 Datasheet. Specs and Replacement
Type Designator: 2SD901 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
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2SD901 datasheet
9.4. Size:181K inchange semiconductor
2sd900.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD900 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 4.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV deflection ... See More ⇒
9.5. Size:213K inchange semiconductor
2sd907.pdf
isc Silicon NPN Power Transistor 2SD907 DESCRIPTION High Collector Current Good Linearity of h FE High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier Series regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
9.6. Size:128K inchange semiconductor
2sd905.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For high voltage power switching TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= )... See More ⇒
9.7. Size:222K inchange semiconductor
2sd909.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD909 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Current Capability Good Linearity of h FE High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier Series regulators Genera... See More ⇒
9.8. Size:206K inchange semiconductor
2sd904.pdf
isc Silicon NPN Power Transistor 2SD904 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 2SD898A, 2SD898B, 2SD899, 2SD899A, 2SD90, 2SD900, 2SD900A, 2SD900B, MJE340, 2SD902, 2SD903, 2SD904, 2SD905, 2SD906, 2SD907, 2SD908, 2SD909
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