All Transistors. 2SD906 Datasheet

 

2SD906 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD906
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1400 V
   Maximum Collector-Emitter Voltage |Vce|: 650 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 17
   Noise Figure, dB: -
   Package: TO3

 2SD906 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD906 Datasheet (PDF)

 9.1. Size:45K  sanyo
2sd904.pdf

2SD906

 9.2. Size:30K  no
2sd900.pdf

2SD906

 9.3. Size:27K  no
2sd905.pdf

2SD906

 9.4. Size:181K  inchange semiconductor
2sd900.pdf

2SD906 2SD906

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD900DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection

 9.5. Size:213K  inchange semiconductor
2sd907.pdf

2SD906 2SD906

isc Silicon NPN Power Transistor 2SD907DESCRIPTIONHigh Collector CurrentGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.6. Size:128K  inchange semiconductor
2sd905.pdf

2SD906 2SD906

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For high voltage power switching TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

 9.7. Size:222K  inchange semiconductor
2sd909.pdf

2SD906 2SD906

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD909DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Current CapabilityGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGenera

 9.8. Size:206K  inchange semiconductor
2sd904.pdf

2SD906 2SD906

isc Silicon NPN Power Transistor 2SD904DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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