2SD910 Datasheet and Replacement
Type Designator: 2SD910
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO247
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2SD910 Datasheet (PDF)
2sd916.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd916.pdf

isc Silicon NPN Darlington Power Transistor 2SD916DESCRIPTIONHigh DC Current GainLow Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sd911.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Current CapabilityGood Linearity of hFEHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifierSeries regulatorsGenera
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ESM2060 | 2SC2244 | DTA123EET1G | 3DD4617H | MP602 | 2SD592 | CMBT5401
Keywords - 2SD910 transistor datasheet
2SD910 cross reference
2SD910 equivalent finder
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2SD910 replacement
History: ESM2060 | 2SC2244 | DTA123EET1G | 3DD4617H | MP602 | 2SD592 | CMBT5401



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