2SD911 Datasheet. Specs and Replacement
Type Designator: 2SD911 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO3
2SD911 Substitution
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2SD911 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD911 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Current Capability Good Linearity of h FE High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier Series regulators Genera... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION High DC Current Gain Low Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor controls General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
Detailed specifications: 2SD904, 2SD905, 2SD906, 2SD907, 2SD908, 2SD909, 2SD91, 2SD910, TIP31, 2SD912, 2SD913, 2SD914, 2SD915, 2SD916, 2SD917, 2SD918, 2SD919
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