2SD913 Datasheet. Specs and Replacement
Type Designator: 2SD913 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 24
Package: TO3
2SD913 Substitution
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2SD913 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD911 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Current Capability Good Linearity of h FE High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier Series regulators Genera... See More ⇒
Detailed specifications: 2SD906, 2SD907, 2SD908, 2SD909, 2SD91, 2SD910, 2SD911, 2SD912, 2SD313, 2SD914, 2SD915, 2SD916, 2SD917, 2SD918, 2SD919, 2SD92, 2SD920
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