2SD938 Datasheet. Specs and Replacement
Type Designator: 2SD938 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SPECIAL
2SD938 Substitution
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2SD938 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD935 DESCRIPTION With TO-3 Package Low collector saturation voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... See More ⇒
Detailed specifications: 2SD930, 2SD931, 2SD932, 2SD933, 2SD934, 2SD935, 2SD936, 2SD937, 2SA1015, 2SD939, 2SD94, 2SD940, 2SD941, 2SD942, 2SD943, 2SD944, 2SD946
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