All Transistors. 2SD938 Datasheet

 

2SD938 Datasheet and Replacement


   Type Designator: 2SD938
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SPECIAL
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2SD938 Datasheet (PDF)

 9.1. Size:189K  inchange semiconductor
 2sd935.pdf pdf_icon

2SD938

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD935DESCRIPTIONWith TO-3 PackageLow collector saturation voltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driver and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 9.2. Size:204K  inchange semiconductor
 2sd930.pdf pdf_icon

2SD938

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD930DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOHigh ReliabilityGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: D28D8 | 2SD1597 | 2N5811 | BT2944 | CTP3551 | CSD1168P | BCP56-16HE3

Keywords - 2SD938 transistor datasheet

 2SD938 cross reference
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