2SD949 Datasheet and Replacement

   Type Designator: 2SD949
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 130 °C
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search