2SD957 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD957
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO3
2SD957 Transistor Equivalent Substitute - Cross-Reference Search
2SD957 Datasheet (PDF)
2sd957.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD957DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplica
2sd958.pdf
Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sd958 e.pdf
Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sd953.pdf
isc Silicon NPN Power Transistor 2SD953DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM
2sd950.pdf
isc Silicon NPN Power Transistor 2SD950DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM R
2sd951.pdf
isc Silicon NPN Power Transistor 2SD951DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM
2sd956.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD956DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 4.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplicati
2sd959.pdf
isc Silicon NPN Power Transistor 2SD959DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB867Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSO
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
