All Transistors. 2SD963 Datasheet

 

2SD963 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD963
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO3

 2SD963 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD963 Datasheet (PDF)

 9.1. Size:39K  panasonic
2sd966 e.pdf

2SD963
2SD963

Transistor2SD966Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollec

 9.2. Size:38K  panasonic
2sd968.pdf

2SD963
2SD963

Transistor2SD968, 2SD968ASilicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SB789 and 2SB789A1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and t

 9.3. Size:36K  panasonic
2sd966.pdf

2SD963
2SD963

Transistor2SD966Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.9 0.2 4.9 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollec

 9.4. Size:39K  panasonic
2sd965.pdf

2SD963
2SD963

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

 9.5. Size:43K  panasonic
2sd965 e.pdf

2SD963
2SD963

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

 9.6. Size:42K  panasonic
2sd968 e.pdf

2SD963
2SD963

Transistor2SD968, 2SD968ASilicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SB789 and 2SB789A1.5 0.14.5 0.11.6 0.2FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and t

 9.7. Size:229K  utc
2sd965 2sd965a.pdf

2SD963
2SD963

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi

 9.8. Size:18K  utc
2sd965.pdf

2SD963
2SD963

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTNPN TRANSISTORFEATURES*Collector current up to 5A* Collector-Emitter voltage up to 20 VAPPLICATIONS1* Audio amplifier* Flash unit of camera* Switching circuitTO-921:EMITTER 2:COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollector-base

 9.9. Size:101K  secos
2sd965a.pdf

2SD963
2SD963

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 23A Switching circuit ECB C E B DCLASSIFICATION OF hFE(2) Rank Q R SF G230 - 380 Range 340 - 600 560 - 800 H KJ LMilli

 9.10. Size:335K  jiangsu
2sd965a.pdf

2SD963

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING: 965AMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 VCollector-

 9.11. Size:479K  jiangsu
2sd965.pdf

2SD963
2SD963

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package : 965MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

 9.12. Size:555K  htsemi
2sd965a.pdf

2SD963
2SD963

2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V3Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 VIC Collector Current -Continuous 5 AC

 9.13. Size:335K  htsemi
2sd965.pdf

2SD963

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V

 9.14. Size:206K  lge
2sd965a.pdf

2SD963
2SD963

2SD965A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 32.64.252.43.75Features 0.8 Audio amplifier MIN0.530.400.480.44 Flash unit of camera 2x)0.13 B0.35 0.371.5 Switching circuit 3.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 9.15. Size:828K  wietron
2sd965.pdf

2SD963
2SD963

WEITRON 2SD965NPN TransistorCOLLECTOR2.P b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEFEATURES :1.EMITTERTO-92* Flash unit of camera* Switching circuitMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 42 VCollector-Emitter Voltage VCEO 22 VEmitter-Base Voltage VEBO 6 VCollector Current -Continu

 9.16. Size:250K  shenzhen
2sd965a.pdf

2SD963
2SD963

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter V

 9.17. Size:1174K  blue-rocket-elect
2sd965.pdf

2SD963
2SD963

2SD965 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit / Pinnin

 9.18. Size:1175K  blue-rocket-elect
2sd965t.pdf

2SD963
2SD963

2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit

 9.19. Size:124K  tysemi
2sd965k.pdf

2SD963

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SD965KFeaturesLow collector-emitter saturation voltage VCE(sat)Satisfactory operation performances at high efficiency withthe lowvoltage power supply.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VC

 9.20. Size:176K  tysemi
2sd965-q.pdf

2SD963
2SD963

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 9.21. Size:874K  kexin
2sd968.pdf

2SD963
2SD963

SMD Type TransistorsNPN Transistors2SD968SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=100V Complementary to 2SB7890.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO

 9.22. Size:321K  kexin
2sd965a.pdf

2SD963

SMD Type TransistorsNPN Transistors2SD965A1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

 9.23. Size:893K  kexin
2sd968a.pdf

2SD963
2SD963

SMD Type TransistorsNPN Transistors2SD968ASOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=120V Complementary to 2SB789A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCE

 9.24. Size:1219K  kexin
2sd965.pdf

2SD963
2SD963

SMD Type TransistorsNPN Transistors2SD9651.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

 9.25. Size:382K  globaltech semi
gst2sd965.pdf

2SD963
2SD963

GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)

 9.26. Size:3220K  slkor
2sd965a-q 2sd965a-r 2sd965a-s.pdf

2SD963
2SD963

2SD965ANPN Transistors3 Features2 Low saturation voltage1.Base1 Large Collector Power Dissipation and Current2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin

 9.27. Size:386K  powersilicon
2sd965 2sd965a.pdf

2SD963
2SD963

DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20~30 V CURRENT 5 A FEATURES TO-92SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE ECMECHANICAL DATA E C B B CASE: SOT-89, TO-92 SOLDERABILITY: MIL-STD-202,

 9.28. Size:767K  pjsemi
2sd965asq-q 2sd965asq-r 2sd965asq-s.pdf

2SD963
2SD963

2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current1. Base 2. Collector 3.EmitterMarking: Q: AQR:ARS:ASAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOUnitEm

 9.29. Size:2082K  cn shikues
2sd965-r 2sd965-s.pdf

2SD963
2SD963

2SD965TRANSISTOR (NPN) SOT-89FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D: 965MARKINGMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base

 9.30. Size:815K  cn hottech
2sd965.pdf

2SD963
2SD963

2SD965BIPOLAR TRANSISTOR (NPN)FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParame

 9.31. Size:199K  inchange semiconductor
2sd962.pdf

2SD963
2SD963

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD962DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current GainHigh ReliabilityGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for series regulators ,

 9.32. Size:214K  inchange semiconductor
2sd961.pdf

2SD963
2SD963

isc Silicon NPN Power Transistor 2SD961DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CComplement to Type 2SB869Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSO

 9.33. Size:214K  inchange semiconductor
2sd960.pdf

2SD963
2SD963

isc Silicon NPN Power Transistor 2SD960DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.5V(Max) @I = 3ACE(sat) CComplement to Type 2SB868Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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