2SD985 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SD985 Datasheet. Specs and Replacement

Type Designator: 2SD985 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15000

Noise Figure, dB: -

Package: TO126

2SD985 Substitution

- BJT ⓘ Cross-Reference Search

2SD985 datasheet

..1. Size:152K nec

2sd985 2sd986.pdf pdf_icon

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..2. Size:212K inchange semiconductor

2sd985.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD985 DESCRIPTION Collector Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 2000(Min) @ I = 1A FE C Low Collector Saturation Voltage Complement to Type 2SB794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS They are suitable for use to operate from IC... See More ⇒

..3. Size:124K inchange semiconductor

2sd985 2sd986.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2... See More ⇒

9.1. Size:61K fuji

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