2SD985R Datasheet. Specs and Replacement
Type Designator: 2SD985R 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3000
Package: TO126
2SD985R Substitution
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2SD985R datasheet
isc Silicon NPN Darlington Power Transistor 2SD985 DESCRIPTION Collector Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 2000(Min) @ I = 1A FE C Low Collector Saturation Voltage Complement to Type 2SB794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS They are suitable for use to operate from IC... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2... See More ⇒
Detailed specifications: 2SD977, 2SD978, 2SD979, 2SD981, 2SD982, 2SD983, 2SD985, 2SD985O, 13003, 2SD985Y, 2SD986, 2SD986O, 2SD986R, 2SD986Y, 2SD987, 2SD990, 2SD991
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History: TIX712 | BUL54A-TO5 | 2SD981
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