2SD985R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD985R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO126
2SD985R Transistor Equivalent Substitute - Cross-Reference Search
2SD985R Datasheet (PDF)
2sd985.pdf
isc Silicon NPN Darlington Power Transistor 2SD985DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC
2sd985 2sd986.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
