2SD986R Datasheet. Specs and Replacement

Type Designator: 2SD986R  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO126

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2SD986R datasheet

 8.1. Size:152K  nec

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2SD986R

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 8.2. Size:212K  inchange semiconductor

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2SD986R

isc Silicon NPN Darlington Power Transistor 2SD986 DESCRIPTION Collector Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO DC Current Gain- h = 2000(Min) @ I = 1A FE C Low Collector Saturation Voltage Complement to Type 2SB795 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS They are suitable for use to operate from IC... See More ⇒

 8.3. Size:124K  inchange semiconductor

 2sd985 2sd986.pdf pdf_icon

2SD986R

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2... See More ⇒

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Detailed specifications: 2SD982, 2SD983, 2SD985, 2SD985O, 2SD985R, 2SD985Y, 2SD986, 2SD986O, BC327, 2SD986Y, 2SD987, 2SD990, 2SD991, 2SD991K, 2SD992, 2SD993, 2SD994

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