2SD986Y Datasheet and Replacement
Type Designator: 2SD986Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: TO126
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2SD986Y Datasheet (PDF)
2sd986.pdf

isc Silicon NPN Darlington Power Transistor 2SD986DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 80V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB795Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC
2sd985 2sd986.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
Datasheet: 2SD983 , 2SD985 , 2SD985O , 2SD985R , 2SD985Y , 2SD986 , 2SD986O , 2SD986R , 2SA1837 , 2SD987 , 2SD990 , 2SD991 , 2SD991K , 2SD992 , 2SD993 , 2SD994 , 2SD995 .
History: 2SC999A | P307V | KRA732E | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - 2SD986Y transistor datasheet
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History: 2SC999A | P307V | KRA732E | 2N1056 | UN9217R | KT8107D2 | ECG2306



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