2SD997 Datasheet and Replacement

   Type Designator: 2SD997
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3

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2SD997 Datasheet (PDF)

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2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Mini Power Type Package 2. COLLECTOR Excellent DC Current Gain Linearity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collec

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SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD992-ZTO-252Unit: mm+0.15 +0.1Features6.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Coll

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SMD Type TransistorsNPN Transistors2SD999SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

9.9. Size:548K cn sptech
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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isc Silicon NPN Power Transistor 2SD993DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 10V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput st

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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2SD997 Datasheet and Replacement

2SD997 Datasheet (PDF)

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