All Transistors. 2SD999CM Datasheet

 

2SD999CM Datasheet and Replacement


   Type Designator: 2SD999CM
   SMD Transistor Code: CM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT89
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2SD999CM Datasheet (PDF)

 8.1. Size:222K  nec
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2SD999CM

 8.2. Size:31K  no
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2SD999CM

 8.3. Size:337K  htsemi
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2SD999CM

2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Mini Power Type Package 2. COLLECTOR Excellent DC Current Gain Linearity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collec

 8.4. Size:1169K  kexin
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2SD999CM

SMD Type TransistorsNPN Transistors2SD999SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

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History: 2SD1353GR | BFS31 | KSR1114 | LDTA124EM3T5G | ZTX327M | FMA5A | GA4L3M

Keywords - 2SD999CM transistor datasheet

 2SD999CM cross reference
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