40316 Specs and Replacement
Type Designator: 40316
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.375 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO66
40316 Substitution
- BJT ⓘ Cross-Reference Search
40316 datasheet
Doc No. TT4-EA-14485 Revision. 2 Product Standards MOS FET SK8403160L SK8403160L Silicon N-channel MOS FET Unit mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance RDS(on) typ = 3.2 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 4 0.3 1.0 ... See More ⇒
Detailed specifications: 40314S , 40314V1 , 40314V2 , 40315 , 40315L , 40315S , 40315V1 , 40315V2 , A1015 , 40317 , 40317L , 40317S , 40317V1 , 40317V2 , 40318 , 40319 , 40319L .
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