40317V1 Specs and Replacement
Type Designator: 40317V1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5F
40317V1 Substitution
- BJT ⓘ Cross-Reference Search
40317V1 datasheet
Doc No. TT4-EA-14209 Revision. 5 Product Standards MOS FET SK8403170L SK8403170L Silicon N-channel MOS FET Unit mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 4 0.3 1.0 ... See More ⇒
Detailed specifications: 40315L , 40315S , 40315V1 , 40315V2 , 40316 , 40317 , 40317L , 40317S , D882 , 40317V2 , 40318 , 40319 , 40319L , 40319S , 40319V1 , 40319V2 , 40320 .
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