40319S Datasheet, Equivalent, Cross Reference Search
Type Designator: 40319S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO5
40319S Transistor Equivalent Substitute - Cross-Reference Search
40319S Datasheet (PDF)
sk840319.pdf
Doc No. TT4-EA-14210Revision. 6Product StandardsMOS FETSK8403190LSK8403190LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0 Ma
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .