40366V1 Datasheet and Replacement

   Type Designator: 40366V1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5F
     - BJT ⓘ Cross-Reference Search