2N2485 Specs and Replacement
Type Designator: 2N2485
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8.7 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO5
2N2485 Substitution
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2N2485 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2484 NPN general purpose transistor 1997 May 01 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N2484 FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION Low voltage (max. 60 V) 1 emitter 2 base ... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level, low noise amplifier applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base ... See More ⇒
Detailed specifications: 2N2484, 2N2484A, 2N2484ACSM, 2N2484ADCSM, 2N2484CSM, 2N2484DCSM, 2N2484QF, 2N2484UB, 2SA1015, 2N2486, 2N2487, 2N2488, 2N2489, 2N249, 2N2490, 2N2491, 2N2492
Keywords - 2N2485 pdf specs
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