All Transistors. 9013 Datasheet

 

9013 Datasheet, Equivalent, Cross Reference Search

Type Designator: 9013

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: TO92

9013 Transistor Equivalent Substitute - Cross-Reference Search

 

9013 Datasheet (PDF)

0.1. ss9013.pdf Size:40K _fairchild_semi

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9013

SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCB

0.2. ss9013.pdf Size:53K _samsung

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SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Vo

 0.3. mms9013-l.pdf Size:201K _mcc

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MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.4. s9013h s9013g s9013i.pdf Size:192K _mcc

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MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating and

 0.5. mms9013-h.pdf Size:201K _mcc

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MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMS9013-H Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

0.6. mmbt9013.pdf Size:144K _utc

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 UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

0.7. 9013.pdf Size:88K _utc

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UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92 * Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Fr

0.8. sts9013.pdf Size:197K _auk

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 STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-B

0.9. s9013t.pdf Size:95K _secos

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S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2

0.10. s9013.pdf Size:343K _secos

9013



0.11. s9013w.pdf Size:54K _secos

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S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3

0.12. 9013.pdf Size:76K _wingshing

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NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER 特 征 特 征 特 征 特 征 发 射 极 Power dissipation 最大耗散功率 2.BASE 基 极 PCM : 0.625 W Tamb=25 3.COLLECTOR Collector current 最大集电极电流 集 电 极 ICM : 0.5 A 1 2 3 Collector-base voltage 集电极--基极击穿电压 V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless

0.13. cmbt9013.pdf Size:131K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V C

0.14. cd9013.pdf Size:94K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package C B E General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 40 V VEBO Emitter Base

0.15. tp9013nnd03.pdf Size:305K _jiangsu

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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.2×1.2×0.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

0.16. 9013s.pdf Size:1012K _jiangsu

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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 9013S TRANSISTOR (NPN) TO-92 FEATURES Complementary to 9012S 1. EMITTER Excellent hFE linearity 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

0.17. ktc9013sc.pdf Size:350K _kec

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SEMICONDUCTOR KTC9013SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012SC. DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 MAXIMUM RATING (Ta=25℃) J 0.10 K 0.00 ~ 0.10 CHARACTERISTIC SYMBO

0.18. ktc9013.pdf Size:46K _kec

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SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25℃) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Col

0.19. ktc9013s.pdf Size:395K _kec

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SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P

0.20. 2sc9013.pdf Size:84K _usha

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Transistors 2SC9013 Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

0.21. s9013.pdf Size:195K _inchange_semiconductor

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isc Silicon NPN Power Transistor S9013 DESCRIPTION ·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter

0.22. s9013.pdf Size:587K _htsemi

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S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power

0.23. s9013w.pdf Size:431K _htsemi

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S901 3W TRANSISTOR(NPN) SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipatio

0.24. s9013.pdf Size:240K _gsme

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桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ■FEATURES 特點 FEATURES Excellent HFE Linearity HFE 線性特性極好 hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 与 GM9012 互补 MAXIMUM RATINGS (Ta=25 ) ■MAXIMUM RATIN

0.25. s9013 sot-23.pdf Size:167K _lge

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 S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector

0.26. s9013 to-92.pdf Size:158K _lge

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S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

0.27. s9013lt1.pdf Size:125K _wietron

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S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain h

0.28. 9013plt1 9013qlt1 9013rlt1 9013slt1.pdf Size:276K _willas

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FM120-M WILLAS THRU 9013xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline Features • Batch process design, excellent power dissipation offers FEATURE better reverse leakage current and thermal resistance. SOD-123H We declare that the material of product complianc

0.29. s9013.pdf Size:407K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

0.30. s9013lt1.pdf Size:359K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter

0.31. btc9013a3.pdf Size:319K _cystek

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Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Description • The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 50mV(typ.) at I /I = 100mA/10mA,

0.32. s9013.pdf Size:256K _can-sheng

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TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val

0.33. s9013 sot-23.pdf Size:260K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

0.34. 9013m.pdf Size:817K _blue-rocket-elect

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9013M(3DG9013M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9012M(BR3CG9012M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9012M(BR3CG9012M). 用途 / Applications 用于收音机推挽功放。

0.35. l9013.pdf Size:147K _lrc

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LESHAN RADIO COMPANY, LTD. NPN Epitaxial Silicon L9013 Transistor 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to L9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

0.36. l9013slt1g.pdf Size:153K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

0.37. l9013qlt1g.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9013PLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

0.38. l9013rlt1g.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Sh

0.39. l9013plt1g.pdf Size:155K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

0.40. h9013.pdf Size:67K _shantou-huashan

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9013 █ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector D

0.41. ftc9013s.pdf Size:96K _first_silicon

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SEMICONDUCTOR FTC9013S TECHNICAL DATA X General Purpose Transistors NPN Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9013SX SOT– 23 FTC9013SX 10000/Tape&Reel SOT-23 3 COLLECTOR MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 20

0.42. kst9013.pdf Size:987K _kexin

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SMD Type TransistICs SMD Type or SMD Type NPN Transistors KST9013 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current :IC=0.5A 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage

0.43. kst9013c.pdf Size:388K _kexin

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SMD Type IC SMD Type Transistors SMD Type NPN Transistors KST9013C SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current :IC=0.5A 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltag

0.44. cht9013gp.pdf Size:181K _chenmko

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CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Surface mount package. (SOT-23) * Suitable for high packing density. (1) CONSTRUCTION (3) *NPN Silicon Transistor (2) MARKING * HFE(L):J3 ( ) ( ) .055 1.

0.45. dmbt9013.pdf Size:144K _dc_components

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DC COMPONENTS CO., LTD. DMBT9013 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 3 = Collector .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) .091(2.30) Cha

0.46. 3dg9013.pdf Size:222K _foshan

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9013(3DG9013) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于收音机推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大, h 特性极好,与 9012(3CG9012)互补。 C C FE Features: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE 极限参数/Absolute maximum ratings(Ta=25℃)

0.47. pt23t9013.pdf Size:125K _prisemi

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 PT23T9013 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

0.48. mmbt9013lt1.pdf Size:138K _wej

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RoHS MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9012 2.EMITTER Collector Current :Ic=500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit:mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO 40

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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