9013 Datasheet and Replacement

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92* Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package PackingNormal Lead Fr

NPN SILICON TRANSISTOR9013TO 92 FEATURES1.EMITTER Power dissipation 2.BASE PCM : 0.625 W Tamb=253.COLLECTOR Collector current ICM : 0.5 A 1 2 3 Collector-base voltage -- V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless

9013 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features P I h 9012 C C FEHigh PC and IC, excellent hFE linearity, complementary pair with 9012. / Applications Amplifier of portable

SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB

SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

STS9013NPN Silicon TransistorDescriptions PIN Connection General purpose application. C Switching application. BFeatures Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-B

S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity AL33CLASSIFICATION OF hFE Top View C B11 2Product-Rank S9013W-L S9013W-H S9013W-J 2K ERange 120~200 200~350 300~400 DMarking Code J3

S9013TNPN Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.2

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CMBT 9013PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 35 VCollector -Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5.0 VC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CD9013TO-92Plastic PackageCBEGeneral Purpose Audio Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Otherwise Specified)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 30 VVCBOCollector Base Voltage 40 VVEBOEmitter Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 9013S TRANSISTOR (NPN) TO-92 FEATURES Complementary to 9012S 1. EMITTER Excellent hFE linearity 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASESymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L

Transistors2SC9013Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

S901 3WTRANSISTOR(NPN)SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA P Collector Power Dissipatio

S901 3TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mA PC Collector Power

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9013FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

S9013 Transistor(NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

S9013 NPN Silicon Epitaxial Planar TransistorFEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max Complementary To S9012. A 2.70 3.10EB 1.10 1.50K B Excellent HFE Linearity. C 1.0 TypicalD 0.4 Typical Power dissipation.(PC=300mW). E 0.35 0.48JDG 1.80 2.00GH 0.02 0.1J 0.1 TypicalAPPLICATIONS HK 2.20 2.60CAll Dimensions in mm Hi

S9013 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector

S9013LT13P b Lead(Pb)-Free12SOT-23ValueVCEO20405.0500S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S0.12040100100u0.15350.15 u4.01/2 28-Apr-2011WEITRONhttp://www.weitron.com.twS9013LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Max UnitMinON CHARACTERISTICSDC Current Gainh

FM120-M WILLASTHRU9013xLT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductNPN Silicon Package outlineFeatures Batch process design, excellent power dissipation offersFEATURE better reverse leakage current and thermal resistance.SOD-123HWe declare that the material of product complianc

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter

NPN NPN EPITAXIAL SILICON TRANSISTOR R3DG9013 MAIN CHARACTERISTICS Package I 500mA CV 20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURES zFEATURESTO-92Complementary to S9012 zExcellent hFE linearity1.EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2.BASESymbol Parameter Val

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

9013M Rev.E Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9012M C FEHigh PC and hFE, excellent hFE linearity, complementary pair with 9012M. / Applications Amplifier of portable radi

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo

9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9013Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

L9013QLT1GS-L9013QLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector D

SEMICONDUCTORFTC9013STECHNICAL DATAXGeneral Purpose TransistorsNPN SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9013SX SOT 23 FTC9013SX10000/Tape&ReelSOT-233COLLECTORMAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 20

SMD Type ICSMD Type TransistorsSMD TypeNPN TransistorsKST9013CSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A12+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltag

SMD Type TransistICsSMD Type orSMD TypeNPN TransistorsKST9013SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage

CHENMKO ENTERPRISE CO.,LTDCHT9013GPSURFACE MOUNT NPN Silicon TransistorVOLTAGE 25Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Surface mount package. (SOT-23)* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN Silicon Transistor(2)MARKING* HFE(L):J3( ) ( ).055 1.

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

TRANSISTOR C9013B MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

TRANSISTOR C9013-H MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

9013(3DG9013) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , 9012(3CG9012) C C FEFeatures: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE/Absolute maximum ratings(Ta=25)

Product specification NPN Silicon Epitaxial Planar Transistor S9013 FEATURES Pb High Collector Current.(I = 500mA). CLead-free Complementary To S9012. Excellent H Linearity. FE Power dissipation.(P =300mW). CAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9013 J3 SOT-23 : none is for

PT23T9013 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co

RUMW UMW S9013SOT-23 Plastic-Encapsulate TransistorsS9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

RoHS MMBT9013LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 90122.EMITTER Collector Current :Ic=500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 40

S9013General Purpose TransistorsNPN SiliconPackage outlineFeatures High collector current. (500mA)SOT-23 Lead-free parts for green partner, exceeds environmentalstandards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. S9013 -H.(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0.055 (1.40)0.024 (0.60)0.047 (1.20) 0.018 (0

S9013Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to S9012 High Stability and High Reliability MARKINGJ3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V

S9013 General Purpose Transistors NPN SiliconFEATURES High Collector Current. SOT-23 Complementary to S9012. Excellent hFE Linearity.MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipat

S9 013SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking: J3Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V CV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power D

S9013NPN Epitaxial Silicon TransistorTO-924.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.21.250.22: Base1 2 3stg:Tj, T -55 to +150 C3: Collector2.5

S9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 Plastic PackageMARKING: J3 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEB

www.msksemi.comS9013-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High Collector Current. Complementary to S9012-MS Excellent hFE Linearity.1. BASE2. EMITTERMARKING: J3 SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volta

MMBT9013 NPN Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP TransistorMMBT9012 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 40 V CBOCollector Emitter Voltage V

S9013NPN Transistors321.BaseFeatures2.Emitter1 3.CollectorExcellent hFE linearityCollector Current :IC=0.5A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage VCEO 25 VEmitter - Base Voltage VEBO 5 VCollector Current - Continuous IC 500 mACollector Power Dissipat

Jingdao Microelectronics co.LTDS9013General Purpose TransistorNPN SiliconFEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity.SOT-23 3COLLECTOOR31DEVICE MARKINGBASES9013 = J312EMITTER2MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcC

S9013 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S9012 ; Complementary to S9012 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

S9013 SOT-23 NPN Transistors32 1.BaseFeatures2.Emitter1 3.Collector Excellent hFE linearityCollector Current :IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage VCEO 25 VEmitter - Base Voltage VEBO 5 VCollector Current - Continuous IC 500 mACollector Pow

S9013SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage

S9013S9013 TRANSISTOR NPN 1 BASE2 EMITTER 3 COLLECTOR TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base VoltageVCEO 25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage 5 VIC Collector Current -Contin

Jul 2015 SEBT9012,9013,9014,9015,9016,9018 PNP Plastic-Encapsulate Transistors (9012, 9015) Revision: A NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018) Feature AM/FM Amplifier, local oscillator of FM/VHF tuner High current gain bandwidth product Applications Inverter, Interface, Driver 9012 is complementary to 9013 9014 is complementary to 9015

RoHS RoHSCOMPLIANT COMPLIANTS9013 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: J3 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 40 Collector-Emitter Voltage V

S9013 S9013 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9012 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: J3 Maximum Ratings & Thermal Characteristics TA = 25C unl

SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Cu

S9013 TRANSISTORNPN FEATURES SOT-23 Complementary to S9012 Excellent hFE linearity 1BASE 2EMITTER 3COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Coll

FHT9013-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additiona

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS9013MAXIMUM RATINGS (T =25)aCharacteristic Symbol Rating Unit Collector-Base voltageV 40 VdcCBO--Collector-Emitter VoltageV 30 VdcCEO-Emitter-Base voltageV 5.0 VdcEBO

S9013NPN GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V.Collector current IC=0.5A.ansition frequency fT>150MHz @ TrIC=20mAdc, VCE=6Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic 3CTerminals: Solde

S9013BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to S9012 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol

S9013 Features ASOT-23C Dim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.903 1.10L0.45 0.61MMMaximum Ratings @ T = 25

isc Silicon NPN Power Transistor S9013DESCRIPTIONExcellent hFE linearityComplement to PNP Type S9012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter