9013 Datasheet, Equivalent, Cross Reference Search

9013 Transistor Equivalent Substitute - Cross-Reference Search

9013 Datasheet (PDF)

0.1. ss9013.pdf Size:40K _fairchild_semi

SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB

0.2. ss9013.pdf Size:53K _samsung

SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo

 0.3. mms9013-l.pdf Size:201K _mcc

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.4. s9013h s9013g s9013i.pdf Size:192K _mcc

MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and

 0.5. mms9013-h.pdf Size:201K _mcc

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

0.6. mmbt9013.pdf Size:144K _utc

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

0.7. 9013.pdf Size:88K _utc

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92* Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package PackingNormal Lead Fr

0.8. sts9013.pdf Size:197K _auk

STS9013NPN Silicon TransistorDescriptions PIN Connection General purpose application. C Switching application. BFeatures Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-B

0.9. s9013t.pdf Size:95K _secos

S9013TNPN Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.2

0.10. s9013.pdf Size:343K _secos

0.11. s9013w.pdf Size:54K _secos

S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity AL33CLASSIFICATION OF hFE Top View C B11 2Product-Rank S9013W-L S9013W-H S9013W-J 2K ERange 120~200 200~350 300~400 DMarking Code J3

0.12. 9013.pdf Size:76K _wingshing

NPN SILICON TRANSISTOR9013TO 92 FEATURES1.EMITTER Power dissipation 2.BASE PCM : 0.625 W Tamb=253.COLLECTOR Collector current ICM : 0.5 A 1 2 3 Collector-base voltage -- V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless

0.13. cmbt9013.pdf Size:131K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CMBT 9013PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 35 VCollector -Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5.0 VC

0.14. cd9013.pdf Size:94K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CD9013TO-92Plastic PackageCBEGeneral Purpose Audio Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Otherwise Specified)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 30 VVCBOCollector Base Voltage 40 VVEBOEmitter Base

0.15. tp9013nnd03.pdf Size:305K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

0.16. 9013s.pdf Size:1012K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 9013S TRANSISTOR (NPN) TO-92 FEATURES Complementary to 9012S 1. EMITTER Excellent hFE linearity 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASESymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

0.17. ktc9013sc.pdf Size:350K _kec

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

0.18. ktc9013.pdf Size:46K _kec

SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCol

0.19. ktc9013s.pdf Size:395K _kec

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity._A 2.93 0.20+B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P

0.20. 2sc9013.pdf Size:84K _usha

Transistors2SC9013Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

0.21. s9013.pdf Size:587K _htsemi

S901 3TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mA PC Collector Power

0.22. s9013w.pdf Size:431K _htsemi

S901 3WTRANSISTOR(NPN)SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA P Collector Power Dissipatio

0.23. s9013.pdf Size:240K _gsme

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9013FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

0.24. s9013 sot-23.pdf Size:167K _lge

S9013 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector

0.25. s9013 to-92.pdf Size:158K _lge

S9013 Transistor(NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

0.26. s9013lt1.pdf Size:125K _wietron

S9013LT13P b Lead(Pb)-Free12SOT-23ValueVCEO20405.0500S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S0.12040100100u0.15350.15 u4.01/2 28-Apr-2011WEITRONhttp://www.weitron.com.twS9013LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Max UnitMinON CHARACTERISTICSDC Current Gainh

0.27. 9013plt1 9013qlt1 9013rlt1 9013slt1.pdf Size:276K _willas

FM120-M WILLASTHRU9013xLT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductNPN Silicon Package outlineFeatures Batch process design, excellent power dissipation offersFEATURE better reverse leakage current and thermal resistance.SOD-123HWe declare that the material of product complianc

0.28. s9013.pdf Size:407K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

0.29. s9013lt1.pdf Size:359K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter

0.30. btc9013a3.pdf Size:319K _cystek

Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,

0.31. s9013.pdf Size:256K _can-sheng

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURES zFEATURESTO-92Complementary to S9012 zExcellent hFE linearity1.EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2.BASESymbol Parameter Val

0.32. s9013 sot-23.pdf Size:260K _can-sheng

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

0.33. 9013m.pdf Size:817K _blue-rocket-elect

9013M(3DG9013M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P ,h , 9012M(BR3CG9012M)C FEHigh PC and hFE, excellent hFE linearity, complementary pair with 9012M(BR3CG9012M). / Applications

0.34. l9013.pdf Size:147K _lrc

LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9013Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol

0.35. l9013slt1g.pdf Size:153K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.36. l9013qlt1g.pdf Size:151K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATUREL9013PLT1GWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.37. l9013rlt1g.pdf Size:151K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh

0.38. l9013plt1g.pdf Size:155K _lrc

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

0.39. h9013.pdf Size:67K _shantou-huashan

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector D

0.40. ftc9013s.pdf Size:96K _first_silicon

SEMICONDUCTORFTC9013STECHNICAL DATAXGeneral Purpose TransistorsNPN SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9013SX SOT 23 FTC9013SX10000/Tape&ReelSOT-233COLLECTORMAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 20

0.41. kst9013.pdf Size:987K _kexin

SMD Type TransistICsSMD Type orSMD TypeNPN TransistorsKST9013SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage

0.42. kst9013c.pdf Size:388K _kexin

SMD Type ICSMD Type TransistorsSMD TypeNPN TransistorsKST9013CSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A12+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltag

0.43. cht9013gp.pdf Size:181K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHT9013GPSURFACE MOUNT NPN Silicon TransistorVOLTAGE 25Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Surface mount package. (SOT-23)* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN Silicon Transistor(2)MARKING* HFE(L):J3( ) ( ).055 1.

0.44. dmbt9013.pdf Size:144K _dc_components

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

0.45. 3dg9013.pdf Size:222K _foshan

9013(3DG9013) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , 9012(3CG9012) C C FEFeatures: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE/Absolute maximum ratings(Ta=25)

0.46. pt23t9013.pdf Size:125K _prisemi

PT23T9013 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

0.47. mmbt9013lt1.pdf Size:138K _wej

RoHS MMBT9013LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 90122.EMITTER Collector Current :Ic=500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 40

0.48. s9013.pdf Size:195K _inchange_semiconductor

isc Silicon NPN Power Transistor S9013DESCRIPTIONExcellent hFE linearityComplement to PNP Type S9012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter

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