9013H Datasheet, Equivalent, Cross Reference Search
Type Designator: 9013H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 144
Noise Figure, dB: -
Package: TO92
9013H Transistor Equivalent Substitute - Cross-Reference Search
9013H Datasheet (PDF)
9013g 9013h 9013i.pdf
9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol
s9013h s9013g s9013i.pdf
MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and
mmbt9013g mmbt9013h.pdf
MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo
s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf
S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co
s9013l s9013h s9013j.pdf
RUMW UMW S9013SOT-23 Plastic-Encapsulate TransistorsS9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V
s9013l s9013h s9013j.pdf
S9013 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S9012 ; Complementary to S9012 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
s9013l s9013h s9013j.pdf
S9013S9013 TRANSISTOR NPN 1 BASE2 EMITTER 3 COLLECTOR TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base VoltageVCEO 25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage 5 VIC Collector Current -Contin
s9013l s9013h s9013j.pdf
RoHS RoHSCOMPLIANT COMPLIANTS9013 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: J3 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 40 Collector-Emitter Voltage V
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N1613S