All Transistors. 9013H Datasheet

 

9013H Datasheet, Equivalent, Cross Reference Search


   Type Designator: 9013H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 144
   Noise Figure, dB: -
   Package: TO92

 9013H Transistor Equivalent Substitute - Cross-Reference Search

   

9013H Datasheet (PDF)

 ..1. Size:167K  semtech
9013g 9013h 9013i.pdf

9013H
9013H

9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol

 0.1. Size:192K  mcc
s9013h s9013g s9013i.pdf

9013H
9013H

MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and

 0.2. Size:676K  semtech
mmbt9013g mmbt9013h.pdf

9013H
9013H

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo

 0.3. Size:179K  semtech
mmbt9013h-h23.pdf

9013H

 0.4. Size:838K  slkor
s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf

9013H
9013H

S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co

 0.5. Size:703K  umw-ic
s9013l s9013h s9013j.pdf

9013H
9013H

RUMW UMW S9013SOT-23 Plastic-Encapsulate TransistorsS9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 0.6. Size:1703K  wpmtek
s9013l s9013h s9013j.pdf

9013H
9013H

S9013 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S9012 ; Complementary to S9012 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

 0.7. Size:727K  cn twgmc
s9013l s9013h s9013j.pdf

9013H
9013H

S9013S9013 TRANSISTOR NPN 1 BASE2 EMITTER 3 COLLECTOR TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base VoltageVCEO 25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage 5 VIC Collector Current -Contin

 0.8. Size:319K  cn yangzhou yangjie elec
s9013l s9013h s9013j.pdf

9013H
9013H

RoHS RoHSCOMPLIANT COMPLIANTS9013 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: J3 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 40 Collector-Emitter Voltage V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N1613S

 

 
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