2N2557 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2557
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.22 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: MT28
2N2557 Transistor Equivalent Substitute - Cross-Reference Search
2N2557 Datasheet (PDF)
9.1. Size:151K semtech
2n25550 2n25551.pdf
2n25550 2n25551.pdf
2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)
Datasheet: 2N2541 , 2N255 , 2N2551 , 2N2552 , 2N2553 , 2N2554 , 2N2555 , 2N2556 , S8550 , 2N2558 , 2N2559 , 2N255A , 2N256 , 2N2560 , 2N2561 , 2N2562 , 2N2563 .
