2N2559 Specs and Replacement

Type Designator: 2N2559

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.22 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: MT28

 2N2559 Substitution

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2N2559 datasheet

 9.1. Size:151K  semtech

 2n25550 2n25551.pdf pdf_icon

2N2559

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

Detailed specifications: 2N2551, 2N2552, 2N2553, 2N2554, 2N2555, 2N2556, 2N2557, 2N2558, BD335, 2N255A, 2N256, 2N2560, 2N2561, 2N2562, 2N2563, 2N2563-5, 2N2564

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