AD149-4 Datasheet. Specs and Replacement
Type Designator: AD149-4 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 27 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
AD149-4 Substitution
- BJT ⓘ Cross-Reference Search
AD149-4 datasheet
isc Silicon PNP Power Transistor AD149 DESCRIPTION Wide Area of Safe Operation DC Current Gain- h =30-100@I = -1A FE C Collector-Emitter Saturation Voltage- V )= -0.7V(Max)@ I = -3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switch and amplifier, consumer and industrial ap... See More ⇒
Detailed specifications: AD143-5, AD143-6, AD143R, AD145, AD148, AD148-4, AD148-5, AD149, 2SD2499, AD149-5, AD150, AD150-4, AD150-5, AD152, AD153, AD153X, AD153Y
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