AF114 Datasheet, Equivalent, Cross Reference Search
Type Designator: AF114
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO7
AF114 Transistor Equivalent Substitute - Cross-Reference Search
AF114 Datasheet (PDF)
draf114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114TDRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114EDRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114YDRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
