All Transistors. BC123G Datasheet

 

BC123G Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC123G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.09 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 240
   Noise Figure, dB: -
   Package: X16

 BC123G Transistor Equivalent Substitute - Cross-Reference Search

   

BC123G Datasheet (PDF)

 9.1. Size:218K  siemens
bc121 bc122 bc123.pdf

BC123G
BC123G

 9.2. Size:103K  onsemi
nsbc123jpdxv6.pdf

BC123G
BC123G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 9.3. Size:103K  onsemi
nsbc123jpdp6.pdf

BC123G
BC123G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 9.4. Size:106K  onsemi
nsbc123tpdp6.pdf

BC123G
BC123G

NSBC123TPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias

 9.5. Size:80K  onsemi
nsbc123epdxv6.pdf

BC123G
BC123G

MUN5331DW1,NSBC123EPDXV6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mo

 9.6. Size:156K  onsemi
nsbc123jf3.pdf

BC123G
BC123G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 9.7. Size:127K  onsemi
nsbc123jdxv6.pdf

BC123G
BC123G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 9.8. Size:109K  onsemi
nsbc123ef3.pdf

BC123G
BC123G

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 9.9. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf

BC123G
BC123G

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 9.10. Size:128K  onsemi
nsbc123jdp6.pdf

BC123G
BC123G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 9.11. Size:99K  onsemi
nsbc123tdp6.pdf

BC123G
BC123G

NSBC123TDP6Dual NPN Bias ResistorTransistorsR1 = 2.2 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis

 9.12. Size:131K  onsemi
nsbc123edxv6.pdf

BC123G
BC123G

MUN5231DW1,NSBC123EDXV6Dual NPN Bias ResistorTransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolith

 9.13. Size:155K  onsemi
nsbc123tf3.pdf

BC123G
BC123G

MUN2238, MMUN2238L,MUN5238, DTC123TE,DTC123TM3, NSBC123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 9.14. Size:399K  onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf

BC123G
BC123G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 9.15. Size:225K  cystek
hbc123js6r.pdf

BC123G
BC123G

Spec. No. : C360S6R Issued Date : 2009.04.30 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/5 Dual NPN Digital Transistors HBC123JS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete is

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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