BC123W Datasheet and Replacement
Type Designator: BC123W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.09
W
Maximum Collector-Base Voltage |Vcb|: 45
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 20
MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: X16
-
BJT ⓘ Cross-Reference Search
BC123W Datasheet (PDF)
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nsbc123tpdp6.pdf 

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nsbc123jdp6.pdf 

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nsbc123tdp6.pdf 

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Spec. No. : C360S6R Issued Date : 2009.04.30 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/5 Dual NPN Digital Transistors HBC123JS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete is
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History: CS684
| BC397
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