BC139A Datasheet, Equivalent, Cross Reference Search
Type Designator: BC139A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
BC139A Transistor Equivalent Substitute - Cross-Reference Search
BC139A Datasheet (PDF)
mbc13900.pdf
Document Number: MBC13900/DFreescale SemiconductorRev. 1.1, 06/2005Technical DataMBC13900(Scale 2:1)Package InformationPlastic PackageCase 318MMBC13900(SOT-343)NPN Silicon Low Noise TransistorOrdering InformationDevice Marking or Device Operating PackageTemperature RangeMBC13900T11 900 SOT-343MBC13900NT11 90N SOT-3431See Table 1.Contents1 Introduction
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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