BC177AP Datasheet, Equivalent, Cross Reference Search
Type Designator: BC177AP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
BC177AP Transistor Equivalent Substitute - Cross-Reference Search
BC177AP Datasheet (PDF)
bc177 cnv 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEET*M3D125BC177PNP general purpose transistor1997 Jun 04Product specificationSupersedes data of 1997 May 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor BC177FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base
bc177.pdf
DISCRETE SEMICONDUCTORSDATA SHEET*M3D125BC177PNP general purpose transistor1997 Jun 04Product specificationSupersedes data of 1997 May 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor BC177FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base
bc177-bc178-bc179.pdf
BC177BC178-BC179LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC177, BC178 and BC179 are silicon planarepitaxial PNP transistors in TO-18 metal case.Theyare suitable for use in driver audio stages, low noiseinput audio stages and as low power, high gaingeneral purpose transistors. The complementaryNPN types are respectively the BC107, BC108 andBC109.TO-18INTER
bc177-a-b.pdf
PNP BC177,A,B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,A,B are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ra
bc177csm.pdf
BC177CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 45V A =(0.04 0.004)
bc177dcsm.pdf
BC177DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.05
bc157vi-a bc158vi-a-b bc159a-b bc177v-vi-a-b bc178v-vi-a-b bc179a-b kc307a-b-v kc308a-b-c kc309f-b-c kc636 kc638 kc640 kf423 kf470 kf517.pdf
bc177 bc178 bc179 a b .pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BC177 BC178 BC179 UNITCollector -Emitter Voltage VCEO 45 25 20 VCollector -Emitter Voltage VCES 50 30 25 VCollector -Base Voltage VCBO 50 30 25 VEmitter
bc177 bc178 bc179 bc257 bc258 bc259 bc307 bc308 bc309 bc320 bc321 bc322.pdf
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
