All Transistors. BC178V Datasheet

 

BC178V Datasheet and Replacement


   Type Designator: BC178V
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92
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BC178V Datasheet (PDF)

 0.1. Size:144K  tesla
 bc157vi-a bc158vi-a-b bc159a-b bc177v-vi-a-b bc178v-vi-a-b bc179a-b kc307a-b-v kc308a-b-c kc309f-b-c kc636 kc638 kc640 kf423 kf470 kf517.pdf pdf_icon

BC178V

 9.1. Size:86K  st
 bc177-bc178-bc179.pdf pdf_icon

BC178V

BC177BC178-BC179LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC177, BC178 and BC179 are silicon planarepitaxial PNP transistors in TO-18 metal case.Theyare suitable for use in driver audio stages, low noiseinput audio stages and as low power, high gaingeneral purpose transistors. The complementaryNPN types are respectively the BC107, BC108 andBC109.TO-18INTER

 9.2. Size:269K  siemens
 bc177 bc178 bc179.pdf pdf_icon

BC178V

 9.3. Size:89K  cdil
 bc177 bc178 bc179 a b .pdf pdf_icon

BC178V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BC177 BC178 BC179 UNITCollector -Emitter Voltage VCEO 45 25 20 VCollector -Emitter Voltage VCES 50 30 25 VCollector -Base Voltage VCBO 50 30 25 VEmitter

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Keywords - BC178V transistor datasheet

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