BC212L Datasheet, Equivalent, Cross Reference Search
Type Designator: BC212L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
BC212L Transistor Equivalent Substitute - Cross-Reference Search
BC212L Datasheet (PDF)
bc212l.pdf
BC212LB CETO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA.Sourced from Process 68. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units50 VVCEO Collector-Emitter Voltage60 VVCBO Collector-Base Voltage5 VVEBO Emitter-Base VoltageCollector Curr
bc212l la lb bc214l.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic PackageBC212L, BC212LA, BC212LBBC214L, BC214LB, BC214LCPNP SILICON PLANAR EPITAXIAL TRANSISTORSAmplifier TransistorsDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.
bc212lb.pdf
BC212LBPNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base V
bc212 bc213 bc214.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC212/DAmplifier TransistorsBC212,BPNP SiliconBC213COLLECTORBC21432BASE1EMITTER1MAXIMUM RATINGS23BC BC BC212 213 214Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitte
bc212b.pdf
BC212BPNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vo
bc212b-d.pdf
BC212BAmplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -60 Vdc3EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdcTotal Device Dissipation @ TA = 25C PD 350 mWDerate a
bc212csm.pdf
BC212CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 50V A =(0.04 0.004)
bc212dcsm.pdf
BC212DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 50V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.05
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MT6L62AT
