BC212LA Specs and Replacement
Type Designator: BC212LA
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
BC212LA Substitution
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BC212LA datasheet
BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 50 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO Emitter-Base Voltage Collector Curr... See More ⇒
BC212LB PNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base V... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package BC212L, BC212LA, BC212LB BC214L, BC214LB, BC214LC PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 L 1.982 2.082 ALL DIMENSIONS IN M.M. ... See More ⇒
Detailed specifications: BC212A, BC212AP, BC212B, BC212BP, BC212K, BC212KA, BC212KB, BC212L, D965, BC212LB, BC213, BC213A, BC213B, BC213C, BC213K, BC213KA, BC213KB
Keywords - BC212LA pdf specs
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