BC213LA Specs and Replacement
Type Designator: BC213LA
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
BC213LA Substitution
- BJT ⓘ Cross-Reference Search
BC213LA datasheet
BC213L PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V V... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC212/D Amplifier Transistors BC212,B PNP Silicon BC213 COLLECTOR BC214 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 212 213 214 Rating Symbol Unit CASE 29 04, STYLE 17 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 30 30 Vdc Collector Base Voltage VCBO 60 45 45 Vdc Emitte... See More ⇒
Detailed specifications: BC213A, BC213B, BC213C, BC213K, BC213KA, BC213KB, BC213KC, BC213L, TIP142, BC213LB, BC213LC, BC214, BC214A, BC214B, BC214BP, BC214C, BC214CP
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