BC214 Transistor. Datasheet pdf. Equivalent
Type Designator: BC214
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO226
BC214 Transistor Equivalent Substitute - Cross-Reference Search
BC214 Datasheet (PDF)
1.1. bc212_bc213_bc214.pdf 
Size:107K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC212/D Amplifier Transistors BC212,B PNP Silicon BC213 COLLECTOR BC214 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 212 213 214 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO –50 –30 –30 Vdc Collector–Base Voltage VCBO –60 –45 –45 Vdc Emitter–Base Voltage VEBO –5.0
1.2. bc214.pdf Size:28K _fairchild_semi
BC214 PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -45 V VEBO Emitte
1.3. bc214lc.pdf Size:27K _fairchild_semi
BC214LC PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -45 V VEBO Emit
1.4. bc214lb.pdf Size:27K _fairchild_semi
BC214LB PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -45 V VEBO Emit
1.5. bc214l.pdf Size:27K _fairchild_semi
BC214L PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -45 V VEBO Emitt
1.6. bc212l_la_lb_bc214l.pdf Size:76K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package BC212L, BC212LA, BC212LB BC214L, BC214LB, BC214LC PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1
Datasheet: BC213K , BC213KA , BC213KB , BC213KC , BC213L , BC213LA , BC213LB , BC213LC , 2SC2078 , BC214A , BC214B , BC214BP , BC214C , BC214CP , BC214K , BC214KA , BC214KB .
LIST
Last Update
BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |