2N2666 PDF and Equivalents Search

 

2N2666 Specs and Replacement

   Type Designator: 2N2666
   Material of Transistor: Ge
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5
     - BJT ⓘ Cross-Reference Search