BC300-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC300-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 177 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
BC300-4 Transistor Equivalent Substitute - Cross-Reference Search
BC300-4 Datasheet (PDF)
9.1. Size:127K cdil
bc300 bc301 bc302.pdf
bc300 bc301 bc302.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can PackageNPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC300 BC301 BC302 UNITSVCEOCollector Emitter Voltage 80 60 45 VVCBOCollect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
